Presentation | 1995/10/23 Post-annealing Effects on the Characteristics of Poly-Si TFT's Kwon-Young Choi, Yong-Sang Kim, Min-Koo Han, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing, excimer laser annealing and two-step annealing. Two-step annealing, which is the combination of furnace annealing at 600 ℃ for 24 h and the sequential furnace annealing at 950℃/1h or the excimer laser annealing, is found to reduce the in-grain defects significantly without changing the grain boundary structure. As a consequence, the performance of the poly-Si thin film transistors (TFT's) produced by employing the two-step annealing has been improved remarkably if compared with those of one-step annealing. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Poly-Si Thin Film Transistors / Two-step Annealing / Grain Boundary / In-grain Defects |
Paper # | EID95-44 |
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Conference Information | |
Committee | EID |
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Conference Date | 1995/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electronic Information Displays (EID) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Post-annealing Effects on the Characteristics of Poly-Si TFT's |
Sub Title (in English) | |
Keyword(1) | Poly-Si Thin Film Transistors |
Keyword(2) | Two-step Annealing |
Keyword(3) | Grain Boundary |
Keyword(4) | In-grain Defects |
1st Author's Name | Kwon-Young Choi |
1st Author's Affiliation | Dep't. of Electrical Eng., Seoul National University() |
2nd Author's Name | Yong-Sang Kim |
2nd Author's Affiliation | Dep't. of Electrical Eng., Myongji University |
3rd Author's Name | Min-Koo Han |
3rd Author's Affiliation | Dep't. of Electrical Eng., Seoul National University |
Date | 1995/10/23 |
Paper # | EID95-44 |
Volume (vol) | vol.95 |
Number (no) | 335 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |