Presentation | 1995/10/23 THE FABRICATION OF HIGH PERFORMANCE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTOR J.H. Lee, J.E. Shin, Y.S. Jin, B.S. Bae, S.B. Mah, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To reduce the leakage current of thin film transistors, we did post-oxidation after gate polysilicon patterning. This post-oxidation makes structural change of gate poly-silicon. It reduces the leakage current with negligible reduction of on-current. The characteristics of thin film transistor(TFT) wad measured for various lengths of lightly-doped drain(LDD) region. This new device structure of TFT shows more stable off-current as increasing the source-drain voltages than that of conventional TFT. This reduction of leakage current was attributed to the reduction of drain junction field. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | POLYSILICON THIN FILM TRANSISTOR / LEAKAGE CURRENT / BENT GATE / LDD(Lightly Doped Drain) |
Paper # | EID95-40 |
Date of Issue |
Conference Information | |
Committee | EID |
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Conference Date | 1995/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electronic Information Displays (EID) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | THE FABRICATION OF HIGH PERFORMANCE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTOR |
Sub Title (in English) | |
Keyword(1) | POLYSILICON THIN FILM TRANSISTOR |
Keyword(2) | LEAKAGE CURRENT |
Keyword(3) | BENT GATE |
Keyword(4) | LDD(Lightly Doped Drain) |
1st Author's Name | J.H. Lee |
1st Author's Affiliation | Samsung Electronics Co..() |
2nd Author's Name | J.E. Shin |
2nd Author's Affiliation | Samsung Electronics Co.. |
3rd Author's Name | Y.S. Jin |
3rd Author's Affiliation | Samsung Electronics Co.. |
4th Author's Name | B.S. Bae |
4th Author's Affiliation | Samsung Electronics Co.. |
5th Author's Name | S.B. Mah |
5th Author's Affiliation | Samsung Electronics Co.. |
Date | 1995/10/23 |
Paper # | EID95-40 |
Volume (vol) | vol.95 |
Number (no) | 335 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |