Presentation 1998/1/29
Fabrication Process of Self-Aligned Organic EL Devices with Side-Wall Structure
Toshiaki TERASHITA, Shigeki NAKA, Hiroyuki OKADA, Hiroyoshi ONNAGAWA,
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Abstract(in English) Fabrication process of self-aligned organic EL devices with side-wall structure have been investigated. Principal point of the process is the formation of side-wall structure using reactive ion etching. Cathode was used as a mask for self-alignment and the insulating side-wall structure was formed around periphery of the device. The device characteristics was measured after side-wall fabrication. Emission was observed above 3.5V and was 1000cd/m^2 at 100mA/cm^2. After the side-wall process, wet-and photolithographic-processes could be applied. The emission have been also confirmed after final fabrication process.
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Keyword(in English) organic EL devices / side-wall structure / self-aligned / photolithography
Paper # EID97-81
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Conference Date 1998/1/29(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication Process of Self-Aligned Organic EL Devices with Side-Wall Structure
Sub Title (in English)
Keyword(1) organic EL devices
Keyword(2) side-wall structure
Keyword(3) self-aligned
Keyword(4) photolithography
1st Author's Name Toshiaki TERASHITA
1st Author's Affiliation Faculty of Engineering, Toyama University()
2nd Author's Name Shigeki NAKA
2nd Author's Affiliation Faculty of Engineering, Toyama University
3rd Author's Name Hiroyuki OKADA
3rd Author's Affiliation Faculty of Engineering, Toyama University
4th Author's Name Hiroyoshi ONNAGAWA
4th Author's Affiliation Faculty of Engineering, Toyama University
Date 1998/1/29
Paper # EID97-81
Volume (vol) vol.97
Number (no) 519
Page pp.pp.-
#Pages 6
Date of Issue