| Presentation | 1997/6/10 A High Voltage MOS Transistor for Solid-state Imager with Avalanche Multiplier Film Hiroshi Ohtake, Miho Nakayama, Masahito Yamauchi, Toshifumi Tajima, Toshiyuki Watabe, Yoshirou Takiguchi, Yuichi Ishiguro, Tetsuya Hayashida, Toshihide Watanabe, Masahide Abe, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied a MOSFET which suits with a readout transistor on a solid-state imager in which MOS scanner is combined with an avalanche photoconversion layer. The MOSFET requires high endurance voltage because high voltage is applied between the scanner and the photoconversion layer to get high multiplication gain using avalanche phenomenon. In this paper, a new MOSFET structure, which can increase the endurance voltage by attaching an electric field relaxation layer to the drain contact of the MOSFET, is described. The devide parameters for fine readout operation were decided by calculations using a process-device simulator. The electric field relaxation layer was confirmed to work effectively because endurance voltage of 60V was obtained on fabricated test devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Image sensor / Avalanche photoconversion film / High voltage MOSFET |
| Paper # | EID97-17 |
| Date of Issue |
| Conference Information | |
| Committee | EID |
|---|---|
| Conference Date | 1997/6/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A High Voltage MOS Transistor for Solid-state Imager with Avalanche Multiplier Film |
| Sub Title (in English) | |
| Keyword(1) | Image sensor |
| Keyword(2) | Avalanche photoconversion film |
| Keyword(3) | High voltage MOSFET |
| 1st Author's Name | Hiroshi Ohtake |
| 1st Author's Affiliation | NHK Science and Technical Research Laboratories() |
| 2nd Author's Name | Miho Nakayama |
| 2nd Author's Affiliation | NHK Science and Technical Research Laboratories |
| 3rd Author's Name | Masahito Yamauchi |
| 3rd Author's Affiliation | NHK Science and Technical Research Laboratories |
| 4th Author's Name | Toshifumi Tajima |
| 4th Author's Affiliation | NHK Science and Technical Research Laboratories |
| 5th Author's Name | Toshiyuki Watabe |
| 5th Author's Affiliation | NHK Science and Technical Research Laboratories |
| 6th Author's Name | Yoshirou Takiguchi |
| 6th Author's Affiliation | NHK Science and Technical Research Laboratories |
| 7th Author's Name | Yuichi Ishiguro |
| 7th Author's Affiliation | NHK Science and Technical Research Laboratories |
| 8th Author's Name | Tetsuya Hayashida |
| 8th Author's Affiliation | NHK Science and Technical Research Laboratories |
| 9th Author's Name | Toshihide Watanabe |
| 9th Author's Affiliation | NHK Science and Technical Research Laboratories |
| 10th Author's Name | Masahide Abe |
| 10th Author's Affiliation | NHK Science and Technical Research Laboratories |
| Date | 1997/6/10 |
| Paper # | EID97-17 |
| Volume (vol) | vol.97 |
| Number (no) | 90 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |