Presentation 1997/6/10
High Sensitive Photodetector using Field Emitters : Wide Dynamic Range
Kazuaki Sawada, Nobuhisa Matumura, Takeshi Masuda, Takao Ando,
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Abstract(in English) The back illumination type photosensitive field emitter was fabricated by depositing p-type a-SiC:H/intrinsic a-Si:H photodiode on the back surface of non-gated n-type cone-shaped Si emitters by using plasma CVD methode. The emission current corresponding with illumination intensity was observed and the quantum efficiency of about 0.7. However, the emission current has tendency to be saturated at high illumination level. To expand the dynamic range of the photodetector, the photosensitive field emitter composed of gated field emitter and p-type a-SiC:H/intrinsic a-Si:H photodiode film was demonstrated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Photodetector / Photosensitive Surface / Field Emitter / Photosensor
Paper # EID97-16
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Conference Date 1997/6/10(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Sensitive Photodetector using Field Emitters : Wide Dynamic Range
Sub Title (in English)
Keyword(1) Photodetector
Keyword(2) Photosensitive Surface
Keyword(3) Field Emitter
Keyword(4) Photosensor
1st Author's Name Kazuaki Sawada
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Nobuhisa Matumura
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Takeshi Masuda
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Takao Ando
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 1997/6/10
Paper # EID97-16
Volume (vol) vol.97
Number (no) 90
Page pp.pp.-
#Pages 6
Date of Issue