| Presentation | 1996/6/21 Electric Field Concentration at Electrode Edge with Decreasing Amorphous Silicon Defect Density and An Improvement for It Hisanori Ihara, Eiji Oba, Tetsuya Yamaguchi, Yoshinori Iida, Hidetoshi Nozaki, Sohei Manabe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Many studies have concentrated on the decrease in a-Si defect density. However, several a-Si image sensor, such as the 2M-pixel charge coupled device (CCD) image sensor, suffer from the following problem: (1) a decrease in defect density causes an increase in reverse biased current. Therefore, we conducted a trial to calculate the electric field around the edge of the electric field concentration at the edge of the electrode, and (2) the electric field concentration was improved by optimizing shape of the electrode edge. In addition, we confirmed that relaxation of the electric field concentration was observed in the prepared sample. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CCD / Amorphous Silicon / Electric Field Concentration / Defect Density |
| Paper # | EID96-20 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1996/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electric Field Concentration at Electrode Edge with Decreasing Amorphous Silicon Defect Density and An Improvement for It |
| Sub Title (in English) | |
| Keyword(1) | CCD |
| Keyword(2) | Amorphous Silicon |
| Keyword(3) | Electric Field Concentration |
| Keyword(4) | Defect Density |
| 1st Author's Name | Hisanori Ihara |
| 1st Author's Affiliation | ULSI Research Laboratories, Research and Development Center, Toshiba Corporation() |
| 2nd Author's Name | Eiji Oba |
| 2nd Author's Affiliation | ULSI Research Laboratories, Research and Development Center, Toshiba Corporation |
| 3rd Author's Name | Tetsuya Yamaguchi |
| 3rd Author's Affiliation | ULSI Research Laboratories, Research and Development Center, Toshiba Corporation |
| 4th Author's Name | Yoshinori Iida |
| 4th Author's Affiliation | ULSI Research Laboratories, Research and Development Center, Toshiba Corporation |
| 5th Author's Name | Hidetoshi Nozaki |
| 5th Author's Affiliation | ULSI Research Laboratories, Research and Development Center, Toshiba Corporation |
| 6th Author's Name | Sohei Manabe |
| 6th Author's Affiliation | ULSI Research Laboratories, Research and Development Center, Toshiba Corporation |
| Date | 1996/6/21 |
| Paper # | EID96-20 |
| Volume (vol) | vol.96 |
| Number (no) | 106 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |