Presentation 1997/3/7
SPM memory using polyimide LB film as recording medium
K. Yano, M. Kyogaku, R. Kuroda, K. Takimoto, K. Eguchi, T. Nakagiri,
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Abstract(in English) Nanometer-scale metal/Langmuir-Blodgett (LB) film/metal structure is realized with a scanning probe microscope (SPM). In this configuration, increase in conductance can be induced in the LB film by application of a voltage pulse. Atomic force microscopy combined with scanning tunneling microscopy(AFM/STM) shows that the conductance of the LB film changes without pit formation in the LB film or metal cluster deposition from the tip of the probe. The transition speed is faster than 1μs, and the transition can be induced at several thousand points, at least, without tip degradation. These facts demonstrate the feasibility of information storage devices with high density.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LB film / Polyimide / STM / AFM / Memory
Paper # EID96-183,OME96-101
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Committee EID
Conference Date 1997/3/7(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) SPM memory using polyimide LB film as recording medium
Sub Title (in English)
Keyword(1) LB film
Keyword(2) Polyimide
Keyword(3) STM
Keyword(4) AFM
Keyword(5) Memory
1st Author's Name K. Yano
1st Author's Affiliation Canon Research Center()
2nd Author's Name M. Kyogaku
2nd Author's Affiliation Canon Research Center
3rd Author's Name R. Kuroda
3rd Author's Affiliation Canon Research Center
4th Author's Name K. Takimoto
4th Author's Affiliation Canon Research Center
5th Author's Name K. Eguchi
5th Author's Affiliation Canon Research Center
6th Author's Name T. Nakagiri
6th Author's Affiliation Canon Research Center
Date 1997/3/7
Paper # EID96-183,OME96-101
Volume (vol) vol.96
Number (no) 567
Page pp.pp.-
#Pages 6
Date of Issue