Presentation 1997/2/14
POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE
Yoon-Ho Song, Jin Ho Lee, Sung Weon Kang, Byoung-Gon Yu, Kyoung Ik Cho, Hyung Joun Yoo,
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Abstract(in English) Gated polycrystalline silicon field emitter arrays have been fabricated by using a combined dry and Wet etching technique for tip formation and a photoresist etch-back process for gate opening. The fabricated emitter with a tip radius of ~100Å showed electron emissions at a gate voltage of 45 V, comparable to single crystalline silicon tips processed with a sharpening oxidation. The developed method can be applicable to glass-based field emitter displays with semiconductor IC techno1ogies.
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Paper # EID96-142
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Committee EID
Conference Date 1997/2/14(1days)
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Language ENG
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Title (in English) POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE
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1st Author's Name Yoon-Ho Song
1st Author's Affiliation Semiconductor Division, Electronics and Telecommunications Research Institute()
2nd Author's Name Jin Ho Lee
2nd Author's Affiliation Semiconductor Division, Electronics and Telecommunications Research Institute
3rd Author's Name Sung Weon Kang
3rd Author's Affiliation Semiconductor Division, Electronics and Telecommunications Research Institute
4th Author's Name Byoung-Gon Yu
4th Author's Affiliation Semiconductor Division, Electronics and Telecommunications Research Institute
5th Author's Name Kyoung Ik Cho
5th Author's Affiliation Semiconductor Division, Electronics and Telecommunications Research Institute
6th Author's Name Hyung Joun Yoo
6th Author's Affiliation Semiconductor Division, Electronics and Telecommunications Research Institute
Date 1997/2/14
Paper # EID96-142
Volume (vol) vol.96
Number (no) 518
Page pp.pp.-
#Pages 2
Date of Issue