Presentation | 1997/2/14 TECHNOLOGIES AND DEVELOPMENT OF FULL COLOR FIELD EMISSION DISPLAY DEVICES J. M. Kim, J. P. Hong, N. G. Park, J. W. Kim, J. H. Choi, J. H. Kang, J. E. Jang, Y. S. Ryu, Y. C. You, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We repdrt the development of 4" full color FED devices with the reliability analysis. Each pixel is composed of 490O tips, which results in 80 million tips for 4" color diagonal panel. The hole pattern of the chromium gate is maintained at 1.1±0.1μm. The low voltage phosphors such as Y_2O_2S:Eu, ZnS:(Ag,Cl,Al), ZnS:(Cu,Al,I) for red, blue and green with special surface treatments are developed and their related screening technologies are studied with electrical analysis. The fully moving images are displayed at the anode bias of 250 volts. The emission current profile of the field emission for the color anode is well investigated with the color anode patterning. We analyze the relationship between the electron emission profiie on the full panel. The brightness at white color mode of color FED is approximately 80cd/m^2. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Field emission display / low voltage phosphor |
Paper # | EID96-140 |
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Conference Information | |
Committee | EID |
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Conference Date | 1997/2/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electronic Information Displays (EID) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | TECHNOLOGIES AND DEVELOPMENT OF FULL COLOR FIELD EMISSION DISPLAY DEVICES |
Sub Title (in English) | |
Keyword(1) | Field emission display |
Keyword(2) | low voltage phosphor |
1st Author's Name | J. M. Kim |
1st Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology() |
2nd Author's Name | J. P. Hong |
2nd Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
3rd Author's Name | N. G. Park |
3rd Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
4th Author's Name | J. W. Kim |
4th Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
5th Author's Name | J. H. Choi |
5th Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
6th Author's Name | J. H. Kang |
6th Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
7th Author's Name | J. E. Jang |
7th Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
8th Author's Name | Y. S. Ryu |
8th Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
9th Author's Name | Y. C. You |
9th Author's Affiliation | Display Materials Lab, Materials sector Samsung Advanced Institute of Technology |
Date | 1997/2/14 |
Paper # | EID96-140 |
Volume (vol) | vol.96 |
Number (no) | 518 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |