Presentation 1997/2/13
New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
Jae-Hong Jeon, Cheol-Min Park, Hong-Seok Choi, Kwon-Young Choi, Min-Koo Han,
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Abstract(in English) We propose the new poly-Si TFT structure which reduces the leakage current effectively employing highly resistive a-Si region in the channel. This new device has partially crystallized active layer, where both edges of channel region adjacent to source and drain are not crystallized and remain a-Si. In the fabrication of the proposed device, there are not additional photo masking steps and misalign problem. Another advalltage of the proposed device is increase of aperture ratio adopting the transparent
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ITO gate
Paper # EID96-104
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Committee EID
Conference Date 1997/2/13(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
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Title (in English) New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
Sub Title (in English)
Keyword(1) ITO gate
1st Author's Name Jae-Hong Jeon
1st Author's Affiliation School of Electrical Engineering, Seoul National University()
2nd Author's Name Cheol-Min Park
2nd Author's Affiliation School of Electrical Engineering, Seoul National University
3rd Author's Name Hong-Seok Choi
3rd Author's Affiliation School of Electrical Engineering, Seoul National University
4th Author's Name Kwon-Young Choi
4th Author's Affiliation School of Electrical Engineering, Seoul National University
5th Author's Name Min-Koo Han
5th Author's Affiliation School of Electrical Engineering, Seoul National University
Date 1997/2/13
Paper # EID96-104
Volume (vol) vol.96
Number (no) 517
Page pp.pp.-
#Pages 4
Date of Issue