Presentation 2001/6/29
High-power operation of weakly index guided buried-stripe type InGaAs strained quantum-well 980 nm laser diodes
Hideyoshi Horie, Nobuhiro Arai, Naoyuki Komuro, Satoru Nagao, Toshinari Fujimori,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Increasing demands of DWDM communication require higher optical output power from InGaAs strained quantum-well 980 nm laser diodes(LDs), which are an essential pumping source for EDFA applications. To this end, we have fabricated buried-stripe type 980 nm LDs that possess a weakly index guided structure with an effective refractive index step(Δn_)of 3.5×10^<-3>. As a result, we have achieved more than 500 mW single transverse-mode operation. In addition, the LDs have shown very stable characteristics under 350 mW and 400 mW constant output power mode aging more than 3,600 hours.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaAs strained QW / 980 nm LD / weakly index guided / high-power operation / single transverse-mode / EDFA
Paper # OPE2001-34,LQE2001-33
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Committee LQE
Conference Date 2001/6/29(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-power operation of weakly index guided buried-stripe type InGaAs strained quantum-well 980 nm laser diodes
Sub Title (in English)
Keyword(1) InGaAs strained QW
Keyword(2) 980 nm LD
Keyword(3) weakly index guided
Keyword(4) high-power operation
Keyword(5) single transverse-mode
Keyword(6) EDFA
1st Author's Name Hideyoshi Horie
1st Author's Affiliation Opto-Electronics Research and Technology Development Center, Mitsubishi Chemical Corporation()
2nd Author's Name Nobuhiro Arai
2nd Author's Affiliation Opto-Electronics Research and Technology Development Center, Mitsubishi Chemical Corporation
3rd Author's Name Naoyuki Komuro
3rd Author's Affiliation Opto-Electronics Research and Technology Development Center, Mitsubishi Chemical Corporation
4th Author's Name Satoru Nagao
4th Author's Affiliation Opto-Electronics Research and Technology Development Center, Mitsubishi Chemical Corporation
5th Author's Name Toshinari Fujimori
5th Author's Affiliation Opto-Electronics Research and Technology Development Center, Mitsubishi Chemical Corporation
Date 2001/6/29
Paper # OPE2001-34,LQE2001-33
Volume (vol) vol.101
Number (no) 174
Page pp.pp.-
#Pages 6
Date of Issue