| Presentation | 2001/6/29 Low Threshold Operation of 1.5 μm Wavelength Strain-Compensated GaInAsP/InP Multiple Wirelike Laser Fabricated by Low-Damage CH_4/H_2 Dry Etching and Regrowth Hideki MIDORIKAWA, Nobuhiro NUNOYA, Kengo MURANUSHI, Shigeo TAMURA, Shigehisa ARAI, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaInAsP/InP strain-compensated five-quantum-well wirelike lasers with a period of 100 nm and the wire width of 43 nm were fabricated by EB lithography, CH_4/H_2-reactive ion etching and organo-metallic-vapor-phase-epitaxial regrowth. As a result, lower threshold current density and higher differential quantum efficiency than those of quantum-film lasers prepared on the same wafer were obtained(cavity length L=1.24 mm and stripe width W_s=20 μm)up to 80℃. Spontaneous emission spectra and material gain spectra were measured, but there was no noticeable difference in these lasers. These results indicate that high-performance of wirelike lasers is attributed to a clear volume effect and above-mentioned method is very promising for low-damage fabrication of ultra fine structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum-wire laser / GaInAsP/InP / strain-compensated quantum-well / CH_4/H_2-RIE / OMVPE regrowth |
| Paper # | OPE2001-33,LQE2001-32 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2001/6/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Threshold Operation of 1.5 μm Wavelength Strain-Compensated GaInAsP/InP Multiple Wirelike Laser Fabricated by Low-Damage CH_4/H_2 Dry Etching and Regrowth |
| Sub Title (in English) | |
| Keyword(1) | quantum-wire laser |
| Keyword(2) | GaInAsP/InP |
| Keyword(3) | strain-compensated quantum-well |
| Keyword(4) | CH_4/H_2-RIE |
| Keyword(5) | OMVPE regrowth |
| 1st Author's Name | Hideki MIDORIKAWA |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Nobuhiro NUNOYA |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Kengo MURANUSHI |
| 3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Shigeo TAMURA |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Shigehisa ARAI |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 2001/6/29 |
| Paper # | OPE2001-33,LQE2001-32 |
| Volume (vol) | vol.101 |
| Number (no) | 174 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |