| Presentation | 2001/6/29 Long-wavelength InAs quantum-dot laser on InP substrate Hideaki Saito, Kenichi Nishi, Shigeo Sugou, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Molecular beam epitaxy was used to grow self-assembled InAs quantum dots on InAl(Ga)As buffer layer/InP(311)B substrates. Their area density was a very high 9×10^<10> cm^<-2> and their room-temperature photoluminescence emission was at 1.6 μm. Emission intensity and emission linewidth showed little degradation in the temperature range from 77 K to 300 K. We fabricated lasers using five-period stacked InAs quantum-dot layers for the active region, and achieved 1.6-μm ground-state lasing with a low threshold current density of 380 A/cm^2. And we operated a quantum dot laser with 0.5-mm-cavity at 20-mA threshold current under continuous wave current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum dot laser / MBE / self-assembled dot / InAs / InP substrate / WDM |
| Paper # | OPE2001-32,LQE2001-31 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2001/6/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Long-wavelength InAs quantum-dot laser on InP substrate |
| Sub Title (in English) | |
| Keyword(1) | quantum dot laser |
| Keyword(2) | MBE |
| Keyword(3) | self-assembled dot |
| Keyword(4) | InAs |
| Keyword(5) | InP substrate |
| Keyword(6) | WDM |
| 1st Author's Name | Hideaki Saito |
| 1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Kenichi Nishi |
| 2nd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 3rd Author's Name | Shigeo Sugou |
| 3rd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| Date | 2001/6/29 |
| Paper # | OPE2001-32,LQE2001-31 |
| Volume (vol) | vol.101 |
| Number (no) | 174 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |