Presentation | 2001/6/8 AIGaInN-based high power lasers Motonobu Takeya, Tsuyoshi Tojyo, Takeharu Asano, Tomonori Hino, Satoru Kijima, Shu Goto, Shirou Uchida, Masao Ikeda, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | AlGaInN-based high power lasers with a kinklevel over 100 mW at 80℃ CW operation have been successfully fabricated on the ELO-GaN layer. A high kink level was obtained by introducing a new laser structure that could suppress the generation of first-Order transverse mode and by narrowing the ridge stripe width. Besides, the threshold current and slope efficiency were improved by introducing a GaInN inter-layer between a multiple-quantum well active layer and an AlGaN layer. The threshold current density was ~3.5kA/cm^2 and the Slope efficiency was 1.2W/A. The mean time to failure (MTTF) of these laser diodes under 30 mW-CW operation at 60 ℃ was over 6000h. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaInN inter-1ayer / new ridge waveguide laser structure / kink level / AlGaN laer |
Paper # | LQE2001-30 |
Date of Issue |
Conference Information | |
Committee | LQE |
---|---|
Conference Date | 2001/6/8(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | AIGaInN-based high power lasers |
Sub Title (in English) | |
Keyword(1) | GaInN inter-1ayer |
Keyword(2) | new ridge waveguide laser structure |
Keyword(3) | kink level |
Keyword(4) | AlGaN laer |
1st Author's Name | Motonobu Takeya |
1st Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc.() |
2nd Author's Name | Tsuyoshi Tojyo |
2nd Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
3rd Author's Name | Takeharu Asano |
3rd Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
4th Author's Name | Tomonori Hino |
4th Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
5th Author's Name | Satoru Kijima |
5th Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
6th Author's Name | Shu Goto |
6th Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
7th Author's Name | Shirou Uchida |
7th Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
8th Author's Name | Masao Ikeda |
8th Author's Affiliation | Development Cemter, Sony Shiroishi Semicondactor Inc. |
Date | 2001/6/8 |
Paper # | LQE2001-30 |
Volume (vol) | vol.101 |
Number (no) | 113 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |