Presentation 2001/6/8
AIGaInN-based high power lasers
Motonobu Takeya, Tsuyoshi Tojyo, Takeharu Asano, Tomonori Hino, Satoru Kijima, Shu Goto, Shirou Uchida, Masao Ikeda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) AlGaInN-based high power lasers with a kinklevel over 100 mW at 80℃ CW operation have been successfully fabricated on the ELO-GaN layer. A high kink level was obtained by introducing a new laser structure that could suppress the generation of first-Order transverse mode and by narrowing the ridge stripe width. Besides, the threshold current and slope efficiency were improved by introducing a GaInN inter-layer between a multiple-quantum well active layer and an AlGaN layer. The threshold current density was ~3.5kA/cm^2 and the Slope efficiency was 1.2W/A. The mean time to failure (MTTF) of these laser diodes under 30 mW-CW operation at 60 ℃ was over 6000h.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaInN inter-1ayer / new ridge waveguide laser structure / kink level / AlGaN laer
Paper # LQE2001-30
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Conference Information
Committee LQE
Conference Date 2001/6/8(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) AIGaInN-based high power lasers
Sub Title (in English)
Keyword(1) GaInN inter-1ayer
Keyword(2) new ridge waveguide laser structure
Keyword(3) kink level
Keyword(4) AlGaN laer
1st Author's Name Motonobu Takeya
1st Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.()
2nd Author's Name Tsuyoshi Tojyo
2nd Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
3rd Author's Name Takeharu Asano
3rd Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
4th Author's Name Tomonori Hino
4th Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
5th Author's Name Satoru Kijima
5th Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
6th Author's Name Shu Goto
6th Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
7th Author's Name Shirou Uchida
7th Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
8th Author's Name Masao Ikeda
8th Author's Affiliation Development Cemter, Sony Shiroishi Semicondactor Inc.
Date 2001/6/8
Paper # LQE2001-30
Volume (vol) vol.101
Number (no) 113
Page pp.pp.-
#Pages 6
Date of Issue