| Presentation | 2001/6/8 High reflective GaN/Al_<0.6>Ga_<0.4>N distributed Bragg reflector for VCSEL Naoyuki Nakada, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN/AlGaN distributed Bragg reflectors (DBR) were grown under the low-pressure condition by MOCVD. Those structures were fabricated on the atmospheric pressure grown GaN layer on sapphire substrate. The Al content of AIGaN was estimated O.6 by X-ray dirfraction. The flat surfaces without cracks were succcssfully obtained for the growth of GaN/Al_<0.6>Ga_<0.4>N DBR. For 45.5 pairs, the peak reflectivity of over 98 % was obtained at a wavelength of 421 nm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AIGaN / MOCVD / LP-MOCVD / DBR / VCSEL |
| Paper # | LQE2001-28 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2001/6/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High reflective GaN/Al_<0.6>Ga_<0.4>N distributed Bragg reflector for VCSEL |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AIGaN |
| Keyword(3) | MOCVD |
| Keyword(4) | LP-MOCVD |
| Keyword(5) | DBR |
| Keyword(6) | VCSEL |
| 1st Author's Name | Naoyuki Nakada |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering,Nagoya Institute of Technology() |
| 2nd Author's Name | Hiroyasu Ishikawa |
| 2nd Author's Affiliation | Research Center for Micro-Structure Devices,Nagoya Institute of Technology |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Research Center for Micro-Structure Devices,Nagoya Institute of Technology |
| 4th Author's Name | Takashi Jimbo |
| 4th Author's Affiliation | Department of Environmental Technology and Urban Planning,Nagoya Institute of Technology |
| 5th Author's Name | Masayoshi Umeno |
| 5th Author's Affiliation | Department of Electronics Engineering, Chubu University |
| Date | 2001/6/8 |
| Paper # | LQE2001-28 |
| Volume (vol) | vol.101 |
| Number (no) | 113 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |