Presentation 2001/6/8
Blue LED using a GaNP SQW
Seikoh Yoshida, Yoshiteru Itoh, Junjiroh Kikawa,
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Abstract(in English) III-V-N mixed semiconductors are newpromising materials for light-emitting diodes (LEDs) over a wider range of wavelengths from ultraviolet to infrared due to huge band gap bowing. We grew the GaNP using laser-assisted MOCVD. Furthermore, we fabricated the GaNP single quantum well structure LED. Ablight blue-violet emission (425nm) of the GaNP LED was confirmed for the first time.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / GaNP / SQW / LED / EL / MOCVD
Paper # LQE2001-27
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Conference Information
Committee LQE
Conference Date 2001/6/8(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Blue LED using a GaNP SQW
Sub Title (in English)
Keyword(1) GaN
Keyword(2) GaNP
Keyword(3) SQW
Keyword(4) LED
Keyword(5) EL
Keyword(6) MOCVD
1st Author's Name Seikoh Yoshida
1st Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co.,Ltd.()
2nd Author's Name Yoshiteru Itoh
2nd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co.,Ltd.
3rd Author's Name Junjiroh Kikawa
3rd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co.,Ltd.
Date 2001/6/8
Paper # LQE2001-27
Volume (vol) vol.101
Number (no) 113
Page pp.pp.-
#Pages 6
Date of Issue