Presentation 2001/6/8
Epitaxial Growth of Eudoped GaN and its optical property
Hyungin Bang, Shinichi Morishima, Katsuhiro Akimoto,
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Abstract(in English) Eu doped GaN was gown by molecular beam epitaxy (MBE) using ammonia, and its optical property was studied. It was possible to grow single crysta11ine with Eu contents up to 2%. Sharp luminescence peak originating from intra-atomic f-f-transition of Eu was observed at 622nm. This red emission was genarated through excitaion of GaN, which means that Eu doped GaN can be used as an active layer for current injection devices. The emission peak and in tensity are extremly stable with temperature variation and it is possible to fabricate novel optical deviccs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / MBE / Eu / Photoluminescence / EXAFS
Paper # LQE2001-26
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Committee LQE
Conference Date 2001/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Epitaxial Growth of Eudoped GaN and its optical property
Sub Title (in English)
Keyword(1) GaN
Keyword(2) MBE
Keyword(3) Eu
Keyword(4) Photoluminescence
Keyword(5) EXAFS
1st Author's Name Hyungin Bang
1st Author's Affiliation University of Tsukuba()
2nd Author's Name Shinichi Morishima
2nd Author's Affiliation University of Tsukuba
3rd Author's Name Katsuhiro Akimoto
3rd Author's Affiliation University of Tsukuba
Date 2001/6/8
Paper # LQE2001-26
Volume (vol) vol.101
Number (no) 113
Page pp.pp.-
#Pages 5
Date of Issue