Presentation 2001/6/8
Electronic States and Photoionization Processes in Self-Assembled InAs Quantum Dots
S. Fujimoto, S.-W Lee, K. Hirotani, Ph. Lelong, K. Hirakawa,
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Abstract(in English) Fordevice appliCation of quantum dots, it is important to clarify the electronic states in quantum dits (QDS). We have determined the binding energy of electron S-bound state in self-assembled InAs QDs embedded in GaAs matrix by using the structure of modulation-doped QD infrared photodetectors (MD-QDIPs). From dark current measurements and mid-infrared photocurrent measurements, it was found that the binding energy of electron 1s-bound states in relatively Small QDs (diameter~15nm) and relatively large dots (diameter~45nm) are~120meV and ~390meV respectively. Similarly by mid-infrared photocurrent measurements, the binding energy of hole s-bound states in relatively sma11 dots (diameter~20nm) was determined to be ~110meV.
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Keyword(in English) Self-assembled quantum dot / mid-1nfrared / photodetector
Paper # LQE2001-24
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Committee LQE
Conference Date 2001/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electronic States and Photoionization Processes in Self-Assembled InAs Quantum Dots
Sub Title (in English)
Keyword(1) Self-assembled quantum dot
Keyword(2) mid-1nfrared
Keyword(3) photodetector
1st Author's Name S. Fujimoto
1st Author's Affiliation Institute of Industrial Science, University of Tokyo()
2nd Author's Name S.-W Lee
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo:CREST JST
3rd Author's Name K. Hirotani
3rd Author's Affiliation Institute of Industrial Science, University of Tokyo
4th Author's Name Ph. Lelong
4th Author's Affiliation Institute of Industrial Science, University of Tokyo
5th Author's Name K. Hirakawa
5th Author's Affiliation Institute of Industrial Science, University of Tokyo:CREST JST
Date 2001/6/8
Paper # LQE2001-24
Volume (vol) vol.101
Number (no) 113
Page pp.pp.-
#Pages 6
Date of Issue