Presentation 2001/6/8
Effects of growth rate on lateral compositional modulation of InGaAsP/InP (001) grown by metal organic molecular beam epitaxy
Matsuyuki Ogasawara,
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Abstract(in English) Two set of In_<1-x>Ga_xAs_<0.85>P_<0.15> (0.35≤x≤0.45) epitaxia1 1ayers have been grown on InP (001) substrates with a composition lying within a miscibi1ity gap, using metalorganic molecular beam epitaxy (MOMBE) at growth rate of O.25 and O.46nm/s, respectively. A double crystal x-ray diffraction is mainly used to characterize structural properties of lateral compositional modulation (LCM). Asymmetric (224) rocking scans showt hat the wavelength of the LCM is of the approximately 100 nm and that the amplitude of the LCM for O.46nm/s samples are smaller than those for O.25 nm/s ones in the entire composition range. Cross-sectional transmission electron microscopy and photoluminescence measurements are also performed for the same samples. These investigations reveal that increasing the growth rate reduces the LCM.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) compositional modulation / growth rate / InGaAsP / miscibility gap / meta1organic molecular beam epitaxy
Paper # LQE2001-23
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Committee LQE
Conference Date 2001/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of growth rate on lateral compositional modulation of InGaAsP/InP (001) grown by metal organic molecular beam epitaxy
Sub Title (in English)
Keyword(1) compositional modulation
Keyword(2) growth rate
Keyword(3) InGaAsP
Keyword(4) miscibility gap
Keyword(5) meta1organic molecular beam epitaxy
1st Author's Name Matsuyuki Ogasawara
1st Author's Affiliation NTT Photonics Laboratories()
Date 2001/6/8
Paper # LQE2001-23
Volume (vol) vol.101
Number (no) 113
Page pp.pp.-
#Pages 6
Date of Issue