Presentation 2001/6/8
0xygen Gas Pressure Dependence of PLD-SiO_2 Thin Films with Organopolysiloxane Targets
Masaaki Kuramatsu, Masayuki Okoshi, Narumi Inoue,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) SiO_2 ttin films were fabricated at room temperature by ablation of organopolysiloxane with an ArF excimerlaser. (Si-0)_n chains of the target were selectively deposited on a substrate in high laser fluence at about 10 J/cm^2. When we used oxygen gas during ablation, Si-0-Si bonds of the films approached those of a silica glass, in addition to reducing carbon mixed into the films. As a result, the transmittance of the 400-nm-thick film showed about 95% at a 500 nm wavelength. The refractive index was 1.416 at a 633 nm wavelength. The electrical resistivity of higher than 10 Ωm was also obtained. From the x-ray photoelectron spectroscopy spectra, the Si 2p peak of the films indicated to be SiO_2.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) organopolysiloxane / pulsed laser deposition(PLD) / So0_2 thin films / ArF excimer laser / oxygen gas
Paper # LQE2001-16
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Conference Information
Committee LQE
Conference Date 2001/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 0xygen Gas Pressure Dependence of PLD-SiO_2 Thin Films with Organopolysiloxane Targets
Sub Title (in English)
Keyword(1) organopolysiloxane
Keyword(2) pulsed laser deposition(PLD)
Keyword(3) So0_2 thin films
Keyword(4) ArF excimer laser
Keyword(5) oxygen gas
1st Author's Name Masaaki Kuramatsu
1st Author's Affiliation Department of Electrical and Electronic Engineering, National Defense Academy()
2nd Author's Name Masayuki Okoshi
2nd Author's Affiliation Department of Electrical and Electronic Engineering, National Defense Academy
3rd Author's Name Narumi Inoue
3rd Author's Affiliation Department of Electrical and Electronic Engineering, National Defense Academy
Date 2001/6/8
Paper # LQE2001-16
Volume (vol) vol.101
Number (no) 113
Page pp.pp.-
#Pages 4
Date of Issue