Presentation 2001/1/19
Integration of Laser and Passive Elements using Selective QW Disordering with SiO_2 Caps of Different Thicknesses
Yutaka Fukumoto, Naoyuki Shimada, Masahiro Uemukai, Toshiaki Suhara, Hiroshi Nishihara,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Selective quantum well disordering using thick and thin SiO_2 caps and rapid thermal annealing was investigated. Fabry-perot lasers were fabricated on a selectively-disordered wafer, and lasing wavelength difference of 23 nm was obtained between the lasers in 300-nm and 30-nm capped areas. We fabricated Fabry-Perot lasers integrated with disordered passive waveguides, and obtained passive waveguide loss reduction from 40 cm^<-1> to 3 cm^<-1>. We fabricated distributed Bragg reflector lasers with quantum well disordered in the grating area, and achieved considerable improvement of laser characteristics compared to lasers without disordering.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) semiconductor laser / monolithic integration / quantum well disordering / rapid thermal annealing
Paper # PS2000-68,OFT2000-78,OPE2000-130,LQE2000-111
Date of Issue

Conference Information
Committee LQE
Conference Date 2001/1/19(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Integration of Laser and Passive Elements using Selective QW Disordering with SiO_2 Caps of Different Thicknesses
Sub Title (in English)
Keyword(1) semiconductor laser
Keyword(2) monolithic integration
Keyword(3) quantum well disordering
Keyword(4) rapid thermal annealing
1st Author's Name Yutaka Fukumoto
1st Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Osaka University()
2nd Author's Name Naoyuki Shimada
2nd Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Osaka University
3rd Author's Name Masahiro Uemukai
3rd Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Osaka University
4th Author's Name Toshiaki Suhara
4th Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Osaka University
5th Author's Name Hiroshi Nishihara
5th Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Osaka University
Date 2001/1/19
Paper # PS2000-68,OFT2000-78,OPE2000-130,LQE2000-111
Volume (vol) vol.100
Number (no) 593
Page pp.pp.-
#Pages 6
Date of Issue