Presentation 2000/10/18
Generation of High Power THz Radiation from Arrayed Antenna of CVD Diamond Pbotoconductive Switches
Hitoki Yoneda, Kazutatsu Tokuyama, Ken-ichi Ueda, Hironori Yamamoto, Kazuhiro Baba,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) High power terahertz(THz)radiation was generated from photoconductive diamond switch array for the first time. This device consisted of more than 2000 photoconductive gaps and a binary mask for spatial modulation of pumping laser. Due to the high breakdown threshold of diamond and the over-coated gap structure for preventing surface flashover, high electric field strength(2x10^6V/cm)can be applied on each gap with DC mode. A 10nJ, 1.5ps FWHM free propagating electro-magnetic pulse was observed from 10mm^2 effective emission area at E=10^5V/cm. This radiation was focused on to 1.4mm・spot with F/2 optics. As there was no severe saturation observed in photoconductive phenomena in CVD diamond up to 10^6V/cm, the focusing intensity can be increased to GW/cm^2 level by increasing the applied electric field and the switching area.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) THz radiation / Diamond thin film / Photoconductive device / Carrier mobility / Ultra-short-pulse laser / Chemical vapor deposited method
Paper # LQE2000-70
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Conference Information
Committee LQE
Conference Date 2000/10/18(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Generation of High Power THz Radiation from Arrayed Antenna of CVD Diamond Pbotoconductive Switches
Sub Title (in English)
Keyword(1) THz radiation
Keyword(2) Diamond thin film
Keyword(3) Photoconductive device
Keyword(4) Carrier mobility
Keyword(5) Ultra-short-pulse laser
Keyword(6) Chemical vapor deposited method
1st Author's Name Hitoki Yoneda
1st Author's Affiliation Institute for Laser Science, University of Electro-Communications()
2nd Author's Name Kazutatsu Tokuyama
2nd Author's Affiliation Institute for Laser Science, University of Electro-Communications
3rd Author's Name Ken-ichi Ueda
3rd Author's Affiliation Institute for Laser Science, University of Electro-Communications
4th Author's Name Hironori Yamamoto
4th Author's Affiliation Device Materials Research Laboratories, Functional Materials Research Laboratories, NEC Corporation
5th Author's Name Kazuhiro Baba
5th Author's Affiliation Device Materials Research Laboratories, Functional Materials Research Laboratories, NEC Corporation
Date 2000/10/18
Paper # LQE2000-70
Volume (vol) vol.100
Number (no) 391
Page pp.pp.-
#Pages 6
Date of Issue