| Presentation | 2000/6/30 High Temperature Characteristics of GaInNAs/GaAs Quantum Well Laser T. Kageyama, T. Miyamoto, S. Makino, N. Nishiyama, F. Koyama, K. Iga, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have grown a GaInNAs/GaAs quantum well laser structure using chemical beam epitaxy with RF radical cell for the purpose of realizing long-wavelength vertical cavity surface emitting lasers. The first lasing operation of GaInNAs/GaAs quantum well stripe lasers grown by chemical beam epitaxy has been demonstrated under pulsed operation. A record high characteristic temperature of 270K for long wavelength lasers was obtained using a Ga_<0.65>In_<0.35>N_<0.003>As_<0.997>/GaAs double quantum well active layer. High temperature operation up to 170℃ was also demonstrated under pulsed operation. Continuous-wave operation of the GaInNAs laser up to 90℃ was also demonstrated at λ=1.20μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaInNAs/GaAs quantum well / chemical beam epitaxy / semiconductor laser / high temperature operation |
| Paper # | OPE2000-35,LQE2000-29 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2000/6/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Temperature Characteristics of GaInNAs/GaAs Quantum Well Laser |
| Sub Title (in English) | |
| Keyword(1) | GaInNAs/GaAs quantum well |
| Keyword(2) | chemical beam epitaxy |
| Keyword(3) | semiconductor laser |
| Keyword(4) | high temperature operation |
| 1st Author's Name | T. Kageyama |
| 1st Author's Affiliation | Precision and Intelligence Lab., Tokyo Institute of Technology() |
| 2nd Author's Name | T. Miyamoto |
| 2nd Author's Affiliation | Precision and Intelligence Lab., Tokyo Institute of Technology |
| 3rd Author's Name | S. Makino |
| 3rd Author's Affiliation | Precision and Intelligence Lab., Tokyo Institute of Technology |
| 4th Author's Name | N. Nishiyama |
| 4th Author's Affiliation | Precision and Intelligence Lab., Tokyo Institute of Technology |
| 5th Author's Name | F. Koyama |
| 5th Author's Affiliation | Precision and Intelligence Lab., Tokyo Institute of Technology |
| 6th Author's Name | K. Iga |
| 6th Author's Affiliation | Precision and Intelligence Lab., Tokyo Institute of Technology |
| Date | 2000/6/30 |
| Paper # | OPE2000-35,LQE2000-29 |
| Volume (vol) | vol.100 |
| Number (no) | 170 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |