| Presentation | 2000/6/14 LQE2000-20 Optoelectronic devices based on lateral p-n junctions fabricated on high-index substrates Pablo O. Vaccaro, Kazuhisa Fujita, Tahito Aida, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate light-emitting diodes and a vertical-cavity surface-emitting laser and fabricated using a lateral p-n junction. The lateral p-n junction is formed in a GaAs-silicon doped layer grown by molecular-beam epitaxy on a patterned GaAs (311)A-oriented substrate. Lateral p-n junctions have particular properties (i.e., small junction area, coplanar contact geometry, can be clad between electrically insulating layers, allow carrier transport in the plane of multilayer structures, etc.) that are promising for application in new devices. Light-emitting diodes exhibit good electroluminescence at room temperature for both GaAs single layers and GaAs/AlGaAs multiple-quantum-well structures. The vertical-cavity surface-emitting laser has electrically insulating distributed Bragg reflectors and coplanar contacts which simplify the device fabrication process. Pulsed-mode operation at room temperature was obtained with a threshold current of 2.3 mA. The light-emission spectrum has a single peak at 942 nm with a full-width at half maximum of 0.15 nm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / lateral junction / silicon doping / MBE / LED / VCSEL |
| Paper # | LQE2000-20 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2000/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | LQE2000-20 Optoelectronic devices based on lateral p-n junctions fabricated on high-index substrates |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | lateral junction |
| Keyword(3) | silicon doping |
| Keyword(4) | MBE |
| Keyword(5) | LED |
| Keyword(6) | VCSEL |
| 1st Author's Name | Pablo O. Vaccaro |
| 1st Author's Affiliation | ATR Adaptive Communications Research Laboratories() |
| 2nd Author's Name | Kazuhisa Fujita |
| 2nd Author's Affiliation | / ATR Adaptive Communications Research Laboratories |
| 3rd Author's Name | Tahito Aida |
| 3rd Author's Affiliation | |
| Date | 2000/6/14 |
| Paper # | LQE2000-20 |
| Volume (vol) | vol.100 |
| Number (no) | 115 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |