Presentation 2000/6/14
Dynamics of Carrier Tunneling between Vertically Aligned Double Quantum Dots
A. Tackeuchi, Y. Nakata, T. Kuroda, K. Mase, N. Yokoyama,
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Abstract(in English) We have directly measured carrier tunneling times between vertically aligned double quantum dots (QDs) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of the In_<0.9>Al_<0.1>As QDs layer, GaAs barrier layer and InAs QDs layer. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QDs is found to be suppressed to one-tenth of the tunneling rate between quantum wells.
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Keyword(in English) Tunneling / Quantum Dots / Time-resolved measurement
Paper # LQE2000-19
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Committee LQE
Conference Date 2000/6/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dynamics of Carrier Tunneling between Vertically Aligned Double Quantum Dots
Sub Title (in English)
Keyword(1) Tunneling
Keyword(2) Quantum Dots
Keyword(3) Time-resolved measurement
1st Author's Name A. Tackeuchi
1st Author's Affiliation Department of Applied Physics, Waseda University()
2nd Author's Name Y. Nakata
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name T. Kuroda
3rd Author's Affiliation Department of Applied Physics, Waseda University
4th Author's Name K. Mase
4th Author's Affiliation Department of Applied Physics, Waseda University
5th Author's Name N. Yokoyama
5th Author's Affiliation Fujitsu Laboratories Ltd.
Date 2000/6/14
Paper # LQE2000-19
Volume (vol) vol.100
Number (no) 115
Page pp.pp.-
#Pages 4
Date of Issue