Presentation 2000/6/14
Modulation-Doped Quantum Dot Infrared Photodetector : Structure, Responsivity, Spectra
S.-W. Lee, K. Hirotani, Ph. Lelong, K. Hirakawa, H. Sakaki,
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Abstract(in English) We have systematically investigated the dependence of the photoexcited carrier lifetimes, τ, on the distance between the heterointerface and the QD layer, d, in the modulation-doped quantum dot infared photodetectors (MD-QDIPs). τin a sample with d=60 nm was determined to be as long as 3.2 μs at T=25 K from the temporal waveform of the photocurrent. This long lifetime enables a very high photoconductive gain in MD-QDIPs, demonstrating flexibility and superiority of the MD-QDIPs. It is also found that τ is drastically reduced when T exceeds 70 K, indicating that the recapturing process of the photoexcited carriers into the QDs is enhanced by optical phonon scattering process.
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Keyword(in English) self-assembled quantum dot / modulation-doped QDIP (MD-QDIP)
Paper # LQE2000-18
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Committee LQE
Conference Date 2000/6/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Modulation-Doped Quantum Dot Infrared Photodetector : Structure, Responsivity, Spectra
Sub Title (in English)
Keyword(1) self-assembled quantum dot
Keyword(2) modulation-doped QDIP (MD-QDIP)
1st Author's Name S.-W. Lee
1st Author's Affiliation Institute of lndustrial Science, University of Tokyo:CREST JST()
2nd Author's Name K. Hirotani
2nd Author's Affiliation Institute of lndustrial Science, University of Tokyo
3rd Author's Name Ph. Lelong
3rd Author's Affiliation Institute of lndustrial Science, University of Tokyo
4th Author's Name K. Hirakawa
4th Author's Affiliation Institute of lndustrial Science, University of Tokyo:CREST JST
5th Author's Name H. Sakaki
5th Author's Affiliation Institute of lndustrial Science, University of Tokyo
Date 2000/6/14
Paper # LQE2000-18
Volume (vol) vol.100
Number (no) 115
Page pp.pp.-
#Pages 6
Date of Issue