Presentation 2000/6/14
High uniform growth of self-organized InAs quantum dots : Self-limiting effect of dot size
Koichi Yamaguchi, Toshiyuki Kaizu, Kunihiko Yujobo,
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Abstract(in English) In Stranski-Krastanov (SK) mode growth of the InAs, a self-limiting effect of quantum dot (QD) size was observed. As a result, size fluctuation was effectively suppressed, and, a narrow photoluminescence (PL) line width of 21.3 meV was achieved. The self-limiting behavior of pyramidal InAs dots was mainly attributed by the formation of the stable facet. The temperature dependence of PL intensity indicated thermal emission and incorporation of electrons between QDs with different size. Low arsenic pressure during the InAs growth allowed large self-limiting size of coherent dots and low density of coalescent dots.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum dot / InAs / self organization / molecular beam epitaxy / self limiting effect / high uniformity
Paper # LQE2000-16
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Committee LQE
Conference Date 2000/6/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High uniform growth of self-organized InAs quantum dots : Self-limiting effect of dot size
Sub Title (in English)
Keyword(1) quantum dot
Keyword(2) InAs
Keyword(3) self organization
Keyword(4) molecular beam epitaxy
Keyword(5) self limiting effect
Keyword(6) high uniformity
1st Author's Name Koichi Yamaguchi
1st Author's Affiliation University of Electro-Communications, Department of Electronic Engineering()
2nd Author's Name Toshiyuki Kaizu
2nd Author's Affiliation University of Electro-Communications, Department of Electronic Engineering
3rd Author's Name Kunihiko Yujobo
3rd Author's Affiliation University of Electro-Communications, Department of Electronic Engineering
Date 2000/6/14
Paper # LQE2000-16
Volume (vol) vol.100
Number (no) 115
Page pp.pp.-
#Pages 8
Date of Issue