Presentation 2000/6/14
Gain measurement of InGaAs/GaAs self-assembled quantum dot lasers
Nobuaki HATORI, Mitsuru SUGAWARA, Kohki MUKAI, Yoshiaki NAKATA, Hiroshi ISHIKAWA,
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Abstract(in English) This paper presents the optical gain and differential gain of two types of self-assembled quantum dots in the laser active region, which shows 1.16 μm and 1.31 μm spontaneous emission from the ground state at room temperature. The gain spectrum was measured using Hakki-Paoli method up to the lasing threshold. The maximum optical gain of the ground state was found to be 150 to 400 cm^<-1> and the differential gain to be 3×10^<-15> to 1×10^<-16> cm^2, which agrees quite well with the calculation, taking into accout both homogeneous broadening and inhomogeneous broadening. Our results will be a guide to the design of laser structures.
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Keyword(in English) Self-assembled quantum dot / MBE method / Gain characteristics / Hakki-Paoli method
Paper # LQE2000-15
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Committee LQE
Conference Date 2000/6/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Gain measurement of InGaAs/GaAs self-assembled quantum dot lasers
Sub Title (in English)
Keyword(1) Self-assembled quantum dot
Keyword(2) MBE method
Keyword(3) Gain characteristics
Keyword(4) Hakki-Paoli method
1st Author's Name Nobuaki HATORI
1st Author's Affiliation Fujitsu Laboratories LTD.()
2nd Author's Name Mitsuru SUGAWARA
2nd Author's Affiliation Fujitsu Laboratories LTD.
3rd Author's Name Kohki MUKAI
3rd Author's Affiliation Fujitsu Laboratories LTD.
4th Author's Name Yoshiaki NAKATA
4th Author's Affiliation Fujitsu Laboratories LTD.
5th Author's Name Hiroshi ISHIKAWA
5th Author's Affiliation Fujitsu Laboratories LTD.
Date 2000/6/14
Paper # LQE2000-15
Volume (vol) vol.100
Number (no) 115
Page pp.pp.-
#Pages 6
Date of Issue