Presentation 2000/6/14
Hole-burning mechanism in quantum dot lasers
Roy Lang, Kazuhiko Misawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Use of quantum dots(QD's)as the active region of semiconductor lasers is expected to improve the lasing characteristics substantially, due to the 3-dimensional carrier confinement. However, the confinement also reduces the carrier exchange among the QD's which have inhomogeneously broadened quantized levels. This can lead to spectral and spatial hole-burning, leading to multi-mode oscillation and degrade the spectral quality. Simulation studies have been made on the dependence of the extent of the two types of HB on the physical and device parameters, and design guidelines have been derived to reduce HB effects.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum Dot / Laser / Hole Burning
Paper # LQE2000-14
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Conference Information
Committee LQE
Conference Date 2000/6/14(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Hole-burning mechanism in quantum dot lasers
Sub Title (in English)
Keyword(1) Quantum Dot
Keyword(2) Laser
Keyword(3) Hole Burning
1st Author's Name Roy Lang
1st Author's Affiliation Applied Physics Dept., Tokyo University of Agriculture and Technology CREST, JST()
2nd Author's Name Kazuhiko Misawa
2nd Author's Affiliation Applied Physics Dept., Tokyo University of Agriculture and Technology CREST, JST
Date 2000/6/14
Paper # LQE2000-14
Volume (vol) vol.100
Number (no) 115
Page pp.pp.-
#Pages 6
Date of Issue