Presentation 1999/8/27
Development of the direct Ge:Ga 2D array
Mikio Fujiwara, Norihisa Hiromoto, Takanori Hirao, Hiroshi Shibai, Takao Nakagawa,
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Abstract(in English) Gallium-doped germanium (Ge:Ga) extrinsic semiconductors have been used as sensitive far-infrared detectors with a cutoff wavelength of 110μm (3 THz), especially in the fields of astronomy, the spectroscopy of molecules and solids, and plasma diagnostics. Developing Ge:Ga photoconductor arrays to take two-dimensional THz images is now an important target for such research fields as the space astronomy. We are developing Ge:Ga far-infrared photoconductor direct hybrid arrays for use as focal-plane detectors in the Far Infrared Surveyor (FIS), one of the two main instruments of the Infrared Imaging Surveyor (IRIS) satelite that will be launched in 2003. In this paper, we report on the basic idea of a 20×3 Ge:Ga far-infrared photoconductor array directly hybridized to a Si p-MOS readbut integrated circuit (IC) using indium bump technology, and give the results of vibration and cooling tests conducted to confirm the strength of the direct hybrid structure.
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Keyword(in English) Ge:Ga 2D photoconductor array / direct hybrid / cryogenic circuits / In bunp / Tera helts ray
Paper # LQE99-49
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Conference Information
Committee LQE
Conference Date 1999/8/27(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of the direct Ge:Ga 2D array
Sub Title (in English)
Keyword(1) Ge:Ga 2D photoconductor array
Keyword(2) direct hybrid
Keyword(3) cryogenic circuits
Keyword(4) In bunp
Keyword(5) Tera helts ray
1st Author's Name Mikio Fujiwara
1st Author's Affiliation CRL()
2nd Author's Name Norihisa Hiromoto
2nd Author's Affiliation CRL
3rd Author's Name Takanori Hirao
3rd Author's Affiliation Nagoya univ.
4th Author's Name Hiroshi Shibai
4th Author's Affiliation Nagoya univ.
5th Author's Name Takao Nakagawa
5th Author's Affiliation ISAS
Date 1999/8/27
Paper # LQE99-49
Volume (vol) vol.99
Number (no) 280
Page pp.pp.-
#Pages 5
Date of Issue