| Presentation | 1999/7/9 GaInAsP/InP Multiple Quantum Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Regrowth Nobuhiro NUNOYA, Madoka NAKAMURA, Takashi KOJIMA, Suguru TANAKA, Hideo YASUMOTO, Shigeo TAMURA, Shigehisa ARAI, |
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| PDF Download Page | PDF download Page Link | ||
| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | GaInAsP/InP double layered quantum-wire lasers, having a period of 100 nm, and the width of 21nm, were realized for the first time. They were fabricated by electron beam lithography, CH_4/H_2 reactive ion etching and two-step organometallic vapor phase epitaxial growth. Threshold current density as low as J_ | =1.45kA/cm^2 was obtained, which was much less than that of previously reported quantum-wire lasers fabricated by only wet chemical etching. Moreover, we improved the initial wafer structure to suppress an etching of the active region, and obtained lasers consisting of 5-layered wire-like active region with good size uniformity(period 120nm, wire width 42nm). The threshold current density as low as J_ | =540A/cm^2 was obtained (cavity length L=1.38mm). |
| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | quantum wire laser / GaInAsP/InP / CH_4/H_2-RIE / OMVPE / electron beam lithography | ||
| Paper # | LQE99-38 | ||
| Date of Issue |
| Conference Information | |
| Committee | LQE |
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| Conference Date | 1999/7/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInAsP/InP Multiple Quantum Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Regrowth |
| Sub Title (in English) | |
| Keyword(1) | quantum wire laser |
| Keyword(2) | GaInAsP/InP |
| Keyword(3) | CH_4/H_2-RIE |
| Keyword(4) | OMVPE |
| Keyword(5) | electron beam lithography |
| 1st Author's Name | Nobuhiro NUNOYA |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Madoka NAKAMURA |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Takashi KOJIMA |
| 3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Suguru TANAKA |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Hideo YASUMOTO |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 6th Author's Name | Shigeo TAMURA |
| 6th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 1999/7/9 |
| Paper # | LQE99-38 |
| Volume (vol) | vol.99 |
| Number (no) | 173 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |