| Presentation | 1999/7/9 Lasing Characteristics of AlGaAs-GaAs V-grooved quantum wire lasers by flow rate modulation epitaxy M. 0gura, T.G. Kim, X.L. Wang, K. Komori, K. Hikoyaka, M. Shimizu, Y. Suzuki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaAs/GaAs quantum wire lasers are prepared by a flow rate modulation epitaxy. Room temperature lasing from the fundamental sub-band level is realized for the first time with the nominal threshold current of 5 mA. Lasing emission coincides with the absorption peaks of the photoluminescence excitation spectra at low temperature. Characteristic temperature coefficient of the lasing threshold is 322K near room temperature, which indicates a sharp density of state profile in the quantum wire. 21ps short optical pulse is generated by gain switching of the laser diode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum wire / semiconductor laser / GaAs / gain switching |
| Paper # | LQE99-37 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1999/7/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Lasing Characteristics of AlGaAs-GaAs V-grooved quantum wire lasers by flow rate modulation epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Quantum wire |
| Keyword(2) | semiconductor laser |
| Keyword(3) | GaAs |
| Keyword(4) | gain switching |
| 1st Author's Name | M. 0gura |
| 1st Author's Affiliation | Electrotechnical Laboratory (ETL) : Crest Japan Science and Technology Corporation (JST)() |
| 2nd Author's Name | T.G. Kim |
| 2nd Author's Affiliation | Electrotechnical Laboratory (ETL) : New energy and industrial technology development organization (NEDO) |
| 3rd Author's Name | X.L. Wang |
| 3rd Author's Affiliation | Electrotechnical Laboratory (ETL) : Crest Japan Science and Technology Corporation(JST) |
| 4th Author's Name | K. Komori |
| 4th Author's Affiliation | Electrotechnical Laboratory (ETL) |
| 5th Author's Name | K. Hikoyaka |
| 5th Author's Affiliation | Crest Japan Science and Technology Corporation (JST) |
| 6th Author's Name | M. Shimizu |
| 6th Author's Affiliation | Electrotechnical Laboratory (ETL) |
| 7th Author's Name | Y. Suzuki |
| 7th Author's Affiliation | Electrotechnical Laboratory (ETL) |
| Date | 1999/7/9 |
| Paper # | LQE99-37 |
| Volume (vol) | vol.99 |
| Number (no) | 173 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |