| Presentation | 1999/7/9 GaAs-based vertical-cavity surface-emitting laser on Si substrate by MOCVD F. Kunimasa, T. Fukami, T. Egawa, T. Jimbo, M. Umeno, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We confirmed that thermal cycle annealing (TCA) between 300℃ and 1000℃ contributed to growth of specular surface morphology as well as reduction of threading dislacations in heteroepitazial growth of GaAs on Si. The reflectivity of 23-pair of AlAs/A_10.1Ga_0.9As Distributed Bragg refelector on Si was improved from 97.4% to 99.2% by use of TCA between 300℃and 1000℃. The bandwidth was as wide as 40 nm at the wavelength above 98%. In addition,In_0.02Ga_0.98As 10QWs VCSEL on Si exhibited CW threshold current of 102 mA (6.19 kA / cm^2) at 230 K. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / GaAs on Si / Thermal Cycle Annealing / Distributed Bragg Reflector / VCSEL |
| Paper # | LQE99-33 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 1999/7/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaAs-based vertical-cavity surface-emitting laser on Si substrate by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | GaAs on Si |
| Keyword(3) | Thermal Cycle Annealing |
| Keyword(4) | Distributed Bragg Reflector |
| Keyword(5) | VCSEL |
| 1st Author's Name | F. Kunimasa |
| 1st Author's Affiliation | Department of Electrical and Computer Engineerign, Nagoya Institute of Teclmology() |
| 2nd Author's Name | T. Fukami |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineerign, Nagoya Institute of Teclmology |
| 3rd Author's Name | T. Egawa |
| 3rd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Teclmology |
| 4th Author's Name | T. Jimbo |
| 4th Author's Affiliation | Department of Environmental Teclmology and Urban Plarming, Nagoya Institute of Teclmology |
| 5th Author's Name | M. Umeno |
| 5th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Teclmology : Research Center for Micro-Structure Devices, Nagoya Institute of Teclmology |
| Date | 1999/7/9 |
| Paper # | LQE99-33 |
| Volume (vol) | vol.99 |
| Number (no) | 173 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |