| Presentation | 1999/7/9 l.3μm InAsP Modulation- Doped MQW Lasers Hitoshi Shimizu, Kaname Saito, Kouji Kumada, Nobumitsu Yamanaka, Norihiro Iwai, Tomokazu Mukaihara, Akihiko Kasukawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The effect of n-type and p-type modulation-doping on MQW laser performances were studied using gas-source molecular-beam epitaxy with the object of the further improvement of long wavelength-strained MQW lasers. The obtained threshold current density was as low as 25OA/cm^2 for n-type modulation-doped (MD) MOW lasers. A very low CW threshold current of 0.9mA have been obtained at room temperature, which is the lowest results grown by all kinds of molecular-beam epitaxy in the long wavelength region. Both reduction of the threshold current and the carrier lifetime lead to the reduction of the tum-on delay time by about 30% for n-type MD-MOW lasers. On the other hand, the differential gain was confirmed to increase by a factor of 1.34 for p-type MD-MQW lasers compared with undoped MOW lasers, which indicates p-type modulation doping is suitable for the high speed lasers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | modulation-doping / low threshold / differential gain / InAsP / GSMBE |
| Paper # | LQE99-29 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1999/7/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | l.3μm InAsP Modulation- Doped MQW Lasers |
| Sub Title (in English) | |
| Keyword(1) | modulation-doping |
| Keyword(2) | low threshold |
| Keyword(3) | differential gain |
| Keyword(4) | InAsP |
| Keyword(5) | GSMBE |
| 1st Author's Name | Hitoshi Shimizu |
| 1st Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.() |
| 2nd Author's Name | Kaname Saito |
| 2nd Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co. |
| 3rd Author's Name | Kouji Kumada |
| 3rd Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co. |
| 4th Author's Name | Nobumitsu Yamanaka |
| 4th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co. |
| 5th Author's Name | Norihiro Iwai |
| 5th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co. |
| 6th Author's Name | Tomokazu Mukaihara |
| 6th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co. |
| 7th Author's Name | Akihiko Kasukawa |
| 7th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co. |
| Date | 1999/7/9 |
| Paper # | LQE99-29 |
| Volume (vol) | vol.99 |
| Number (no) | 173 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |