Presentation 1999/7/9
l.3μm InAsP Modulation- Doped MQW Lasers
Hitoshi Shimizu, Kaname Saito, Kouji Kumada, Nobumitsu Yamanaka, Norihiro Iwai, Tomokazu Mukaihara, Akihiko Kasukawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The effect of n-type and p-type modulation-doping on MQW laser performances were studied using gas-source molecular-beam epitaxy with the object of the further improvement of long wavelength-strained MQW lasers. The obtained threshold current density was as low as 25OA/cm^2 for n-type modulation-doped (MD) MOW lasers. A very low CW threshold current of 0.9mA have been obtained at room temperature, which is the lowest results grown by all kinds of molecular-beam epitaxy in the long wavelength region. Both reduction of the threshold current and the carrier lifetime lead to the reduction of the tum-on delay time by about 30% for n-type MD-MOW lasers. On the other hand, the differential gain was confirmed to increase by a factor of 1.34 for p-type MD-MQW lasers compared with undoped MOW lasers, which indicates p-type modulation doping is suitable for the high speed lasers.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) modulation-doping / low threshold / differential gain / InAsP / GSMBE
Paper # LQE99-29
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Conference Information
Committee LQE
Conference Date 1999/7/9(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) l.3μm InAsP Modulation- Doped MQW Lasers
Sub Title (in English)
Keyword(1) modulation-doping
Keyword(2) low threshold
Keyword(3) differential gain
Keyword(4) InAsP
Keyword(5) GSMBE
1st Author's Name Hitoshi Shimizu
1st Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.()
2nd Author's Name Kaname Saito
2nd Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.
3rd Author's Name Kouji Kumada
3rd Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.
4th Author's Name Nobumitsu Yamanaka
4th Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.
5th Author's Name Norihiro Iwai
5th Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.
6th Author's Name Tomokazu Mukaihara
6th Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.
7th Author's Name Akihiko Kasukawa
7th Author's Affiliation Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Laboratories, The Furukawa Electric Co.
Date 1999/7/9
Paper # LQE99-29
Volume (vol) vol.99
Number (no) 173
Page pp.pp.-
#Pages 6
Date of Issue