Presentation 1999/5/21
Excitation and Relaxation Process of Two-Dimensional Plasmons in GaAs Quantum Wells by Femtosecond Laser Pulses
K. Hirakawa, N. Sekine, M. Vosseburger, P. Haring-Bolivar, H. Kurz,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated teraherz (THz) radiation from two-dimensional (2D) free carrier Plasma oscillations in selectively doped GaAs/AlGaAs single quantum wells by time-resolved THz emission spectroscopy. By varying the excitation wavelength and power of the pump beam, we are able to discriminate plasmon excitations due to coherent impulsive Raman process and due to incoherent current surge and/or impulsive heating by photoexcited carriers.
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Keyword(in English) teraherz / femtosecond laser / quantum well / two-dimensional electrons / modulation-doping
Paper # LQE99-11
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Committee LQE
Conference Date 1999/5/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Excitation and Relaxation Process of Two-Dimensional Plasmons in GaAs Quantum Wells by Femtosecond Laser Pulses
Sub Title (in English)
Keyword(1) teraherz
Keyword(2) femtosecond laser
Keyword(3) quantum well
Keyword(4) two-dimensional electrons
Keyword(5) modulation-doping
1st Author's Name K. Hirakawa
1st Author's Affiliation CREST, Japan Science and Technology Corporation()
2nd Author's Name N. Sekine
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo
3rd Author's Name M. Vosseburger
3rd Author's Affiliation Institut fur Halbleitertechnik, RWTH-Aachen
4th Author's Name P. Haring-Bolivar
4th Author's Affiliation Institut fur Halbleitertechnik, RWTH-Aachen
5th Author's Name H. Kurz
5th Author's Affiliation Institut fur Halbleitertechnik, RWTH-Aachen
Date 1999/5/21
Paper # LQE99-11
Volume (vol) vol.99
Number (no) 80
Page pp.pp.-
#Pages 6
Date of Issue