Presentation | 1999/2/24 1.3μm ACIS Laser Array on p-type Substrate using Selective Oxidation of AllnAs N. Iwai, T. Mukaihara, M. Itoh, N. Yamanaka, S. Arakawa, H. Shimizu, A. Kasukawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 1.3μm Al-Oxide confined inner stripe laser on p-InP substrate has been demonstrated for low cost lase rarray. First, we have investigated oxidation rate of AllnAs layer grown on InP substrate. The optimum conditions were found to be oxidation temperature=500℃,layer thickness=100nm, and Al-contents=0.48 taking oxidation rate and surface morphology into account. Based on above results, AllnAs-oxide confined inner stripe laser on p-InP substrate (PACIS) is fabricated for the first time. A low threshold curmet of 4.OmA and a high slope efficiency of 0.6W/A were obtained. We have also confirmed high reliability under driving time over 3,000hours. Array structure based on PACIS lasers has been fabricated. The average threshold current of 3.98mA and the standard deviation of 0.42mA were measured. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Laser array / Selective oxidation / AllnAs-oxide / p-type substrate / Strained-layer QW lasers |
Paper # | LQE98-148 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 1999/2/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 1.3μm ACIS Laser Array on p-type Substrate using Selective Oxidation of AllnAs |
Sub Title (in English) | |
Keyword(1) | Laser array |
Keyword(2) | Selective oxidation |
Keyword(3) | AllnAs-oxide |
Keyword(4) | p-type substrate |
Keyword(5) | Strained-layer QW lasers |
1st Author's Name | N. Iwai |
1st Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd.() |
2nd Author's Name | T. Mukaihara |
2nd Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd. |
3rd Author's Name | M. Itoh |
3rd Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd. |
4th Author's Name | N. Yamanaka |
4th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd. |
5th Author's Name | S. Arakawa |
5th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd. |
6th Author's Name | H. Shimizu |
6th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd. |
7th Author's Name | A. Kasukawa |
7th Author's Affiliation | Photonics & Opto-Electronic Materials (POEM) Yokohama R&D Labs. The Furukawa Electric Co.,Ltd. |
Date | 1999/2/24 |
Paper # | LQE98-148 |
Volume (vol) | vol.98 |
Number (no) | 617 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |