Presentation 1999/2/24
1.3μm low-threshold semiconductor laser arrays for optical interconnects
Kazuhisa Uomi, Koji Nakahara,
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Abstract(in English) Key issues concerning l.3-μm low-threshold semiconductor laser arrays used in high-density parallel optical interconnects are reviewed. The most recently reported results and future prospects for laser performance and technologies are examined with an emphasis on careful optimization of a strained-MQW active layer and modulation doped effects.
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Keyword(in English) optical interconnects / low-threshold / laser array / modulation doped MQW
Paper # LQE98-147
Date of Issue

Conference Information
Committee LQE
Conference Date 1999/2/24(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.3μm low-threshold semiconductor laser arrays for optical interconnects
Sub Title (in English)
Keyword(1) optical interconnects
Keyword(2) low-threshold
Keyword(3) laser array
Keyword(4) modulation doped MQW
1st Author's Name Kazuhisa Uomi
1st Author's Affiliation Central Research Laboratory, Hitachi Ltd.()
2nd Author's Name Koji Nakahara
2nd Author's Affiliation Central Research Laboratory, Hitachi Ltd.
Date 1999/2/24
Paper # LQE98-147
Volume (vol) vol.98
Number (no) 617
Page pp.pp.-
#Pages 6
Date of Issue