Presentation | 1999/2/24 1.3μm low-threshold semiconductor laser arrays for optical interconnects Kazuhisa Uomi, Koji Nakahara, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Key issues concerning l.3-μm low-threshold semiconductor laser arrays used in high-density parallel optical interconnects are reviewed. The most recently reported results and future prospects for laser performance and technologies are examined with an emphasis on careful optimization of a strained-MQW active layer and modulation doped effects. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | optical interconnects / low-threshold / laser array / modulation doped MQW |
Paper # | LQE98-147 |
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Conference Information | |
Committee | LQE |
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Conference Date | 1999/2/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 1.3μm low-threshold semiconductor laser arrays for optical interconnects |
Sub Title (in English) | |
Keyword(1) | optical interconnects |
Keyword(2) | low-threshold |
Keyword(3) | laser array |
Keyword(4) | modulation doped MQW |
1st Author's Name | Kazuhisa Uomi |
1st Author's Affiliation | Central Research Laboratory, Hitachi Ltd.() |
2nd Author's Name | Koji Nakahara |
2nd Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
Date | 1999/2/24 |
Paper # | LQE98-147 |
Volume (vol) | vol.98 |
Number (no) | 617 |
Page | pp.pp.- |
#Pages | 6 |
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