| Presentation | 1999/2/24 Improvement of characteristics of GaAs-based vertical-cavity surface-emitting laser on Si substrate T. Nehagi, T. Fukami, F. Kunimasa, T. Egawa, T. Jimbo, M. Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We introduced TCA for heteroepitaxial growth of GaAs on Si, for obtaining lower dislocation density. The temperature of TCA which we have so far introduced is 350℃～850℃. In this study, by introducing TCA of 300℃～l000℃, we confirmed not merely the decrease in the dislocation density but the improvement of the surface roughness of GaAs on Si. By using the TCA of 300℃～1000℃, we confirmed the improvement of reflectivity spectra of AlAs/Al_<0.1>Ga_<0.9>As DBR. In addition, In_<0.02>Ga_<0.98>As 10QWs VCSEL on Si exhibits a cw threshold current of 102mA (6.19kA/cm-2) at 230K. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / GaAs on Si / Thermal Cycle Annealing / morphology / Distributed Bragg Reflector / VCSEL |
| Paper # | LQE98-142 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1999/2/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of characteristics of GaAs-based vertical-cavity surface-emitting laser on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | GaAs on Si |
| Keyword(3) | Thermal Cycle Annealing |
| Keyword(4) | morphology |
| Keyword(5) | Distributed Bragg Reflector |
| Keyword(6) | VCSEL |
| 1st Author's Name | T. Nehagi |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering() |
| 2nd Author's Name | T. Fukami |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering |
| 3rd Author's Name | F. Kunimasa |
| 3rd Author's Affiliation | Department of Electrical and Computer Engineering |
| 4th Author's Name | T. Egawa |
| 4th Author's Affiliation | Research center for Micro-Structure Devices |
| 5th Author's Name | T. Jimbo |
| 5th Author's Affiliation | Department of Environmental Technology |
| 6th Author's Name | M. Umeno |
| 6th Author's Affiliation | Department of Electrical and Computer Engineering |
| Date | 1999/2/24 |
| Paper # | LQE98-142 |
| Volume (vol) | vol.98 |
| Number (no) | 617 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |