Presentation	1999/2/24 Atmospheric-pressure MOCVD growth of nitride-VCSELs Takao Someya, Yasuhiko Arakawa,
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Abstract(in English)	We have successfully observed lasing oscillation in an In_<0.1>Ga_<0.9>N vertical cavity surface emitting laser, for the first time, at a wavelength of 381 nm. The 3λ vertical cavity comprising an In_<0.1>Ga_<0.9>N active region was grown on a GaN/Al_<0.34>Ga_N quarter-wave reflector by metal organic chemical vapor deposition, and covered with a TiO_2/Si0_2 reflector by electron-beam evaporation. The laser was operated at 77 K under an optical excitation. The achievement of the lasing oscillation was confirmed by significant narrowing of linewidths in the emission spectra from 2.5 nm below the threshold to 0.1 nm above the threshold.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	VCSEL / blue laser / InGaN / Atmospheric-pressure MOCVD / microcavity / DBR
Paper #	LQE98-140
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Conference Information
Committee	LQE
Conference Date	1999/2/24(1days)
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Paper Information
Registration To	Lasers and Quantum Electronics (LQE)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Atmospheric-pressure MOCVD growth of nitride-VCSELs
Sub Title (in English)
Keyword(1)	VCSEL
Keyword(2)	blue laser
Keyword(3)	InGaN
Keyword(4)	Atmospheric-pressure MOCVD
Keyword(5)	microcavity
Keyword(6)	DBR
1st Author's Name	Takao Someya
1st Author's Affiliation	Institute of Industrial Science, University of Tokyo()
2nd Author's Name	Yasuhiko Arakawa
2nd Author's Affiliation	Institute of Industrial Science, University of Tokyo
Date	1999/2/24
Paper #	LQE98-140
Volume (vol)	vol.98
Number (no)	617
Page	pp.pp.-
#Pages	4
Date of Issue