Presentation 1999/2/24
The Optimum Design and Continuous Wave Lasing in GaInAsP Microdisk Injection Lasers GaInAsP
Masayuki Fujita, Atsushi Sakai, Toshihiko Baba,
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Abstract(in English) We calculated lasing characteristics of GaInAsP microdisk injection lasers, taking account of the scattering loss at center posts and the carrier diffusion effect. We found that the optimum width of the disk edge is O.6-0.7 μm and the minimum threshold current is ~10 μA. The internal differential quantum efficiency can be 50-95 % depending on the condition of quantum-well active layer. We obtained the first room temperature CW operation with a record low threshold of 150μA, which mainly owed to the reduction of the threshold current density. The spontaneous emission factor was estimated to be 6×10^<-3>, which was much reduced by a large detuning of the lasing wavelength against the spontaneous emission peak.
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Keyword(in English) microdisk / whispering gallery mode / microcavity / spontaneous emission control / GaInAsP / semiconductor laser
Paper # LQE98-139
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Committee LQE
Conference Date 1999/2/24(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The Optimum Design and Continuous Wave Lasing in GaInAsP Microdisk Injection Lasers GaInAsP
Sub Title (in English)
Keyword(1) microdisk
Keyword(2) whispering gallery mode
Keyword(3) microcavity
Keyword(4) spontaneous emission control
Keyword(5) GaInAsP
Keyword(6) semiconductor laser
1st Author's Name Masayuki Fujita
1st Author's Affiliation Yokohama NatlUniv., Faculty of Eng., Div. Electr.& Comput. Eng.()
2nd Author's Name Atsushi Sakai
2nd Author's Affiliation Yokohama NatlUniv., Faculty of Eng., Div. Electr.& Comput. Eng.
3rd Author's Name Toshihiko Baba
3rd Author's Affiliation Yokohama NatlUniv., Faculty of Eng., Div. Electr.& Comput. Eng.
Date 1999/2/24
Paper # LQE98-139
Volume (vol) vol.98
Number (no) 617
Page pp.pp.-
#Pages 7
Date of Issue