Presentation 1999/1/19
Selective Disordering of InGaAs Strained Quantum Well
Michitaro Miyata, Naoyuki Shimada, Masahiro Uemukai, Toshiaki Suhara, Hiroshi Nishihara,
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Abstract(in English) Selective disordering of quantum well for increasing bandgap energy is discussed for monolithic integration of active and passive elements. Hydrogen plasma processing and phosphorus-doped silica (P:SiO_2) film loading were examined for suppression of InGaAs quantum well disordering. Lasers were fabricated and tested to examine the effects of disordering on active characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) semiconductor laser / monolithic integration / quantum well disordering / rapid thermal annealing
Paper # PS98-80,OPE98-129,LQE98-122
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Committee LQE
Conference Date 1999/1/19(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Selective Disordering of InGaAs Strained Quantum Well
Sub Title (in English)
Keyword(1) semiconductor laser
Keyword(2) monolithic integration
Keyword(3) quantum well disordering
Keyword(4) rapid thermal annealing
1st Author's Name Michitaro Miyata
1st Author's Affiliation Department of Electronics, Graduate School of Engineering, Osaka University()
2nd Author's Name Naoyuki Shimada
2nd Author's Affiliation Department of Electronics, Graduate School of Engineering, Osaka University
3rd Author's Name Masahiro Uemukai
3rd Author's Affiliation Department of Electronics, Graduate School of Engineering, Osaka University
4th Author's Name Toshiaki Suhara
4th Author's Affiliation Department of Electronics, Graduate School of Engineering, Osaka University
5th Author's Name Hiroshi Nishihara
5th Author's Affiliation Department of Electronics, Graduate School of Engineering, Osaka University
Date 1999/1/19
Paper # PS98-80,OPE98-129,LQE98-122
Volume (vol) vol.98
Number (no) 509
Page pp.pp.-
#Pages 6
Date of Issue