Presentation | 1999/1/19 Effect of built-in field on intersubband transition in GaN quantum wells Nobuo Suzuki, Norio Iizuka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The intersubband transition (ISBT) in nitride quantum wells is expected to be applicable to ultrafast optical switches. Effect of the built-in field caused by the piezoelectric effect and the spontaneous polarization inherent in nitrides on the ISBT is studied. Measured intersubband absorption wavelengths of Al_<0.65>Ga_<0.35>N/GaN multiquantum wells suggest the existence of a built-in field of about 2 MV/cm. The built-in field in a thick well drastically shortens the ISBT wavelength and increases the intersubband relaxation time. On the other hand, the built-in field in barriers affects the formation of the second subband in thin wells. Suppression of the field in the barriers is important in achieving a short wavelength ISBT. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | optical switches / intersubband transition / relaxation time / piezoelectric effect / spontaneous polarization / GaN |
Paper # | PS98-79,OPE98-128,LQE98-121 |
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Conference Information | |
Committee | LQE |
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Conference Date | 1999/1/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effect of built-in field on intersubband transition in GaN quantum wells |
Sub Title (in English) | |
Keyword(1) | optical switches |
Keyword(2) | intersubband transition |
Keyword(3) | relaxation time |
Keyword(4) | piezoelectric effect |
Keyword(5) | spontaneous polarization |
Keyword(6) | GaN |
1st Author's Name | Nobuo Suzuki |
1st Author's Affiliation | Advanced Semiconductor Devices Research Labs., Toshiba Corp.() |
2nd Author's Name | Norio Iizuka |
2nd Author's Affiliation | Advanced Semiconductor Devices Research Labs., Toshiba Corp. |
Date | 1999/1/19 |
Paper # | PS98-79,OPE98-128,LQE98-121 |
Volume (vol) | vol.98 |
Number (no) | 509 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |