| Presentation | 1999/1/19 Analysis of Leakage Current in Buried Heterostructure Lasers H. Watanabe, Y. Yoshida, K. Shibata, A. Takemoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The temperature characteristics of InGaAsP/InP buried heterostructure lasers with p-n-p-n blocking layers have been numerically analyzed using a two-dimensional (2-D) device simulator. According to the analysis of minority carrier flow, the characteristic temperature (To) in high temperature is determined by both of heterobarrier leakage and electrons flowing through the p-n-p-n blocking layers. Experimental estimation of electro-luminessance (EL) emitting from InP layers shows the obvious dependence on the width of blocking layers and well number in the active layer. These results are consistent with the simulation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | buried heterostructure laser / simulation / temperature characteristics / leakage current |
| Paper # | PS98-72,OPE98-121,LQE98-114 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
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| Conference Date | 1999/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Leakage Current in Buried Heterostructure Lasers |
| Sub Title (in English) | |
| Keyword(1) | buried heterostructure laser |
| Keyword(2) | simulation |
| Keyword(3) | temperature characteristics |
| Keyword(4) | leakage current |
| 1st Author's Name | H. Watanabe |
| 1st Author's Affiliation | Mitsubishi Electric Corporation, High Frequency & Optical Semiconductor Division() |
| 2nd Author's Name | Y. Yoshida |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation, High Frequency & Optical Semiconductor Division |
| 3rd Author's Name | K. Shibata |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation, High Frequency & Optical Semiconductor Division |
| 4th Author's Name | A. Takemoto |
| 4th Author's Affiliation | Mitsubishi Electric Corporation, High Frequency & Optical Semiconductor Division |
| Date | 1999/1/19 |
| Paper # | PS98-72,OPE98-121,LQE98-114 |
| Volume (vol) | vol.98 |
| Number (no) | 509 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |