Presentation 1998/7/3
Polarization insensitive electroabsorption modulator integrated with semiconductor optical amplifier at 1.55 μm
Koji Nakamura, Saeko Oshiba, Hideaki Horikawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A polarization insensitive electroabsorption modulator (EAM) integrated with a semiconductor optical amplifier (SOA) has been developed with a ridge waveguide structure. Low polarization sensitivities of less than 1dB were successfully achieved by a butt-coupled junction at the interface which can independently optimize strained MQW structures of the EMA and the SOA. A maximum fiber to fiber gain of 4dB was obtained at a SOA injection current of 200 mA with a 15dB extinction ratio at-3V EAM bias. When the input light was inserted from the EAM side, it was confirmed that chirp parameters significantly reduced to approximately 0.4 at 0 V EAM bias.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) electroabsorption modulator / semiconductor optical amplifier / ridge waveguide / polarization sensitivity
Paper # OPE98-41,LQE98-35
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Conference Information
Committee LQE
Conference Date 1998/7/3(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Polarization insensitive electroabsorption modulator integrated with semiconductor optical amplifier at 1.55 μm
Sub Title (in English)
Keyword(1) electroabsorption modulator
Keyword(2) semiconductor optical amplifier
Keyword(3) ridge waveguide
Keyword(4) polarization sensitivity
1st Author's Name Koji Nakamura
1st Author's Affiliation R&D Group, Oki Electric Industry Co., Ltd.()
2nd Author's Name Saeko Oshiba
2nd Author's Affiliation R&D Group, Oki Electric Industry Co., Ltd.
3rd Author's Name Hideaki Horikawa
3rd Author's Affiliation R&D Group, Oki Electric Industry Co., Ltd.
Date 1998/7/3
Paper # OPE98-41,LQE98-35
Volume (vol) vol.98
Number (no) 167
Page pp.pp.-
#Pages 6
Date of Issue