| Presentation | 1998/7/3 THRESHOLD CURRENT ANALYSIS OF THE GaAs ISLAND LASER ON Si SUBSTRATE. K.I. ZAMAN, T. EGAWA, T. JIMBO, M. UMENO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Different characteristics of the self-formed GaAs island laser on Si substrate by metal-organic chemical vapor deposition (MOCVD) using droplet epitaxy were studied. Also the comparison of the results with the conventional quantum well (QW) laser were presented. The studied self-formed GaAs island laser on Si substrate showed the higher gain coefficient, β (1.65cm/A) with lower transparency current density, J_0 (42.4A/cm^2). The characteristic temperature, T_0 of the self-formed GaAs island laser on Si was higher (230 K) than the conventional QW laser on Si. Also, the self-formed GaAs island laser on Si showed the improved reliability than the conventional QW laser on Si. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / droplet epitaxy / island laser |
| Paper # | OPE98-40,LQE98-34 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
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| Conference Date | 1998/7/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | THRESHOLD CURRENT ANALYSIS OF THE GaAs ISLAND LASER ON Si SUBSTRATE. |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | droplet epitaxy |
| Keyword(3) | island laser |
| 1st Author's Name | K.I. ZAMAN |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | T. EGAWA |
| 2nd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 3rd Author's Name | T. JIMBO |
| 3rd Author's Affiliation | Department of Environmental Technology and Urban Planning Graduate School of Engineering, Nagoya Institute of Technology |
| 4th Author's Name | M. UMENO |
| 4th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| Date | 1998/7/3 |
| Paper # | OPE98-40,LQE98-34 |
| Volume (vol) | vol.98 |
| Number (no) | 167 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |