Presentation 1998/7/3
Fabrication of GaInAsP/InP Quantum-Wire Lasers and Evaluation of Its Optical Gain Characteristics
Takashi KOJIMA, Hiroyuki NAKAYA, Suguru TANAKA, Hideo YASUMOTO, Shigeo TAMURA, Shigehisa ARAI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaInAsP/InP quantum-wire lasers were fabricated by electron-beam lithography, wet-chemical etching and 2-step organometallic vapor phase epitaxy growth, and compared with quantum-film lasers fabricated on the same wafer. As a result, better lasing properties, such as low threshold current and high defferential quantum efficiency of quantum-wire lasers over quantum-film lasers were obtained at T<200K. An internal quantum efficiency of the quantum-wire lasers was evaluated to be almost 100% up to 200K from the cavity length dependence of differential quantum efficiency. Furthermore, gain spectra of quantum-wire lasers as well as quantum-film lasers were measured. As the result, narrower material gain spectrum of quantum-wire lasers was observed at T=100K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum-wire laser / GaInAsP/InP / gain spectrum / electron-beam lithography / OMVPE
Paper # OPE98-39,LQE98-33
Date of Issue

Conference Information
Committee LQE
Conference Date 1998/7/3(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaInAsP/InP Quantum-Wire Lasers and Evaluation of Its Optical Gain Characteristics
Sub Title (in English)
Keyword(1) quantum-wire laser
Keyword(2) GaInAsP/InP
Keyword(3) gain spectrum
Keyword(4) electron-beam lithography
Keyword(5) OMVPE
1st Author's Name Takashi KOJIMA
1st Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology()
2nd Author's Name Hiroyuki NAKAYA
2nd Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
3rd Author's Name Suguru TANAKA
3rd Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
4th Author's Name Hideo YASUMOTO
4th Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
5th Author's Name Shigeo TAMURA
5th Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
6th Author's Name Shigehisa ARAI
6th Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
Date 1998/7/3
Paper # OPE98-39,LQE98-33
Volume (vol) vol.98
Number (no) 167
Page pp.pp.-
#Pages 6
Date of Issue