| Presentation | 1998/6/16 The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure T. Wang, T Sugahara, S Sakai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The temperature dependence of luminescence properties was investigated on an undoped In_<0.126>Ga_<0.874>N/GaN Multiple-quantum-wells(MQW)structure and a pn junction structure(pn)using this MQW as a active layer. At a low temperature(about 20K), the emission intensity of a pn is much higher than that of MQW structure while it becomes lower than that of MQW structure at room temperature. In addition, from about 150k, it is observed that with the increase of temperature, the emission peak from pn makes much stronger redshift than that of the MQW structure, furthermore, its intensity also decreases much larger than that of the MQW structure. This behavior of the pn junction structure is attributed to the quantum-confined-stark effect due to its structure-induced electric field. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / In_xGa_<1-x>N / p-n junction / photoluminescence / localization effect / exciton |
| Paper # | LQE98-26 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1998/6/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | In_xGa_<1-x>N |
| Keyword(3) | p-n junction |
| Keyword(4) | photoluminescence |
| Keyword(5) | localization effect |
| Keyword(6) | exciton |
| 1st Author's Name | T. Wang |
| 1st Author's Affiliation | Satellite Venture Business Laboratory() |
| 2nd Author's Name | T Sugahara |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering The University of Tokushima |
| 3rd Author's Name | S Sakai |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering The University of Tokushima |
| Date | 1998/6/16 |
| Paper # | LQE98-26 |
| Volume (vol) | vol.98 |
| Number (no) | 109 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |