| Presentation | 1995/10/17 Semiconductor Lasers Emitting at 1.3μm on InGaAs Ternary Substrates Hajime Shoji, Toshihiro Kusunoki, Toru Uchida, Hiroshi Ishikawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Semiconductor lasers emitting at 1.3μm with low threshold current and high characteristic temperature are strongly required for applications in optical access systems and optical interconnection systems. For such purposes, use of InGaAs temary substrates is one of the promising ways to achieve high performance 1.3μm lasers because of large optical gain due to deep potential well formed on the ternary substrate. We theoretically indicate that low threshold current density below 100 A/cm^2 and high characteristic temperature nearly 400K by using the InGaAs substrates. We also fabricate lasers on the ternary substrates whose indium compositions arc 0.05 and 0.21, respectively, and prove that the ternary substrates have sufficient quality for laser fabrication. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor laser / InGaAs substrate / quantum well / low threshold / characteristic temperature / 1.3μm |
| Paper # | LQE95-92 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
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| Conference Date | 1995/10/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Semiconductor Lasers Emitting at 1.3μm on InGaAs Ternary Substrates |
| Sub Title (in English) | |
| Keyword(1) | semiconductor laser |
| Keyword(2) | InGaAs substrate |
| Keyword(3) | quantum well |
| Keyword(4) | low threshold |
| Keyword(5) | characteristic temperature |
| Keyword(6) | 1.3μm |
| 1st Author's Name | Hajime Shoji |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Toshihiro Kusunoki |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Toru Uchida |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Hiroshi Ishikawa |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 1995/10/17 |
| Paper # | LQE95-92 |
| Volume (vol) | vol.95 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |