Presentation 1995/10/17
1.3μm-GaInAsP/InP Tensile-Strained Quantum Well Lasers
N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa,
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Abstract(in English) 1.3μm-GaInAs/InP tensile-strained quantum well (QW) lasers grown by MOCVD are investigated. High crystalline quality tensile-strained QWs is confirmed by X-ray diffraction and photoluminescence measurements. We investigated threshold characteristics of ridge waveguide lasers having 12nm-thick, -1.15% tensile-strained QWs. The lowest threshold current density per well for infinite cavity length is 100Acm^2 for 3QW structure. Threshold current density of 150A/cm^2 is obtained for a 1QW laser with 200μm-long and high reflective coatings. The lowest threshold current of 1.6mA is realized for a buried heterostructure 3QW laser. Tensile-strained QW laser is attractive for the light source of fiber in the loop systems.
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Keyword(in English) Fiber in the loop / Tensile-strained QWs / Low threshold lasers
Paper # LQE95-89
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Conference Information
Committee LQE
Conference Date 1995/10/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.3μm-GaInAsP/InP Tensile-Strained Quantum Well Lasers
Sub Title (in English)
Keyword(1) Fiber in the loop
Keyword(2) Tensile-strained QWs
Keyword(3) Low threshold lasers
1st Author's Name N. Yokouchi
1st Author's Affiliation The Furukawa Electric Co., Ltd., Yokohama R & D Laboratories()
2nd Author's Name N. Yamanaka
2nd Author's Affiliation The Furukawa Electric Co., Ltd., Yokohama R & D Laboratories
3rd Author's Name N. Iwai
3rd Author's Affiliation The Furukawa Electric Co., Ltd., Yokohama R & D Laboratories
4th Author's Name A. Kasukawa
4th Author's Affiliation The Furukawa Electric Co., Ltd., Yokohama R & D Laboratories
Date 1995/10/17
Paper # LQE95-89
Volume (vol) vol.95
Number (no) 294
Page pp.pp.-
#Pages 6
Date of Issue