Presentation 1995/10/17
All selective MOVPE grown 1.3μm strained MQW BH-LDs
Y. Sakata, Y. Inomoto, T. Hosoda, Y. Sasaki, T. Morimoto, T. Murakami, H. Hasumi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 1.3μm strained MQW BH LDs with a current blocking structure have been developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM(All Selective MOVPE grown)-BH-LDs. The fabrication process is completely eliminates semiconductor etching. This novel LD structure and fabrication process brought the low threshold and good temperature characteristics with excellent uniformity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Selective M0VPE / Laser diodes / self-alignment mask / etching-less-process
Paper # LQE95-88
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Conference Information
Committee LQE
Conference Date 1995/10/17(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) All selective MOVPE grown 1.3μm strained MQW BH-LDs
Sub Title (in English)
Keyword(1) Selective M0VPE
Keyword(2) Laser diodes
Keyword(3) self-alignment mask
Keyword(4) etching-less-process
1st Author's Name Y. Sakata
1st Author's Affiliation ULSI Device Development Laboratories()
2nd Author's Name Y. Inomoto
2nd Author's Affiliation ULSI Device Development Laboratories
3rd Author's Name T. Hosoda
3rd Author's Affiliation ULSI Device Development Laboratories
4th Author's Name Y. Sasaki
4th Author's Affiliation ULSI Device Development Laboratories
5th Author's Name T. Morimoto
5th Author's Affiliation ULSI Device Development Laboratories
6th Author's Name T. Murakami
6th Author's Affiliation ULSI Device Development Laboratories
7th Author's Name H. Hasumi
7th Author's Affiliation ULSI Device Development Laboratories
Date 1995/10/17
Paper # LQE95-88
Volume (vol) vol.95
Number (no) 294
Page pp.pp.-
#Pages 6
Date of Issue